Burst EDO
Burst Extended Data Out DRAM
 
  
 
  
Nearby terms: 
							burn-in « burn-in period « Burroughs Corporation « 
							Burst EDO » Burst Extended Data Out DRAM » burst 
							page » Burst Static Random Access Memory
 
Burst Extended Data Out DRAM
<storage> (Burst EDO, BEDO) A variant on EDO DRAM in which read or write 
cycles are batched in bursts of four. The bursts wrap around on a four byte 
boundary which means that only the two least significant bits of the CAS address 
are modified internally to produce each address of the burst sequence. 
Consequently, burst EDO bus speeds will range from 40MHz to 66MHz, well above 
the 33MHz bus speeds that can be accomplished using Fast Page Mode or EDO DRAM.
 
Burst EDO was introduced sometime before May 1995.
 
(1996-06-25)
 
  
 
  
Nearby terms: 
							burn-in period « Burroughs Corporation « Burst EDO « 
							Burst Extended Data Out DRAM » burst page » 
							Burst Static Random Access Memory » bus
 
burst page
banner
 
  
 
  
Nearby terms: 
							Burroughs Corporation « Burst EDO « Burst Extended 
							Data Out DRAM « burst page » Burst Static 
							Random Access Memory » bus » bus error
 
Burst Static Random Access Memory
<storage> (BSRAM) A kind of SRAM used primarily for external Level 2 
cache memory.
 
[How does it work?]
 
(1998-02-24)
 
  
 
  
Nearby terms: 
							Burst EDO « Burst Extended Data Out DRAM « burst 
							page « 
							Burst Static Random Access Memory » bus » bus 
							error » Bush, Vannevar
 
							
					  |