Page Mode Dynamic Random Access Memory
<hardware, storage> A technique used to support faster sequential access
to DRAM by allowing any number of accesses to the currently open row to be made
after supplying the row address just once.
The RAS signal is kept active, and with each falling edge of the CAS\ signal a
new column address can be supplied and the corresponding bits can be accessed.
This is faster than a full RAS-CAS cycle because only the shorter Column Access
Time needs to be obeyed.
Note that strictly speaking such a DRAM is not a true random access memory since
accesses to the open row are faster than to other locations.
EDO RAM is replacing Page Mode DRAM in many new microcomputers.
[Is "Fast Page Mode" the same as "Page Mode"?]
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